A focused electron beam is used to directly write patterns on a substrate coated with an electron-sensitive resist (such as PMMA). When the electron beam irradiates the resist, it causes molecular chain scission or chemical changes, thereby altering the solubility characteristics of the resist. After development, the unexposed or exposed areas are removed to form the desired micro- and nanostructures. This technique is renowned for its extremely high resolution and is suitable for fabricating tiny, complex nanostructures.

Raith/Vistec EBPG 5000Plus electron beam lithography system

  • High-precision processing with minimum feature sizes down to 10 nm
  • Suitable for nanostructure fabrication on various thin-film substrates (such as Si, Si₃N₄, SiC, diamond)
  • Supports 4-inch wafer processing

KIT/IMT EBPG5200Z electron beam lithography system

  • Combines the highest precision and resolution with rapid patterning capability
  • Capable of fabricating microstructures with feature sizes as small as 100 nm and heights up to 2 µm
  • Extremely precise pattern placement with errors less than 100 nm, suitable for large-area (centimeter-scale) applications


Typical applications

  • Design and fabrication of X-ray masks
  • High-performance requirements for small-period X-ray gratings
  • High-resolution Fresnel zone plates and other precision nanostructures