Extreme‑ultraviolet laser interference lithography is an advanced micro‑nano fabrication method that combines extreme‑ultraviolet light (typically at a wavelength of 13.5 nm) with interference optical technology. Through the interference of two or more coherent extreme‑ultraviolet laser beams, a light field with periodic intensity distribution is formed to directly expose photoresist and generate high‑precision nanoscale patterns on substrates. It is suitable for the efficient fabrication of large‑area periodic structures.

Phable R200 lithography system

  • The minimum feature size is 60 nm, which is suitable for the patterning of large‑area periodic structures.

  • Supports 8‑inch wafer processing with exposure uniformity better than 3%.

  • Provides front‑side alignment and manual overlay alignment functions to ensure high‑precision processing.


Typical Applications

  • Large‑area nanopattern lithography, suitable for mass production

  • Fabrication of diffraction gratings and other periodic structures