SpotLight-P Microfocus X-ray Source
The SpotLight-P polycapillary microfocus X-ray source combines a low-power X-ray tube with a polycapillary X-ray lens to deliver high-flux X-ray beams, widely used in advanced materials analysis. The SpotLight-P is available in several standard focusing, microfocusing, or collimated beam configurations, and can also be customized for specific applications.
Model: SpotLight-P
Brand: 艾格斯瑞
Introduction
The SpotLight-P polycapillary microfocus X-ray source combines a low-power X-ray tube with a polycapillary X-ray lens to deliver high-flux X-ray beams, widely used in advanced materials analysis. The SpotLight-P is available in several standard focusing, microfocusing, or collimated beam configurations, and can also be customized for specific applications.
Company Introduction
Founded in 2020, XGR (Chengdu) Instrument Equipment Co., Ltd. is dedicated to the R&D, design, and manufacturing of core X-ray components and parts, based on a simulation modeling system, committed to providing efficient, reliable, and advanced turnkey solutions for industrial and research customers.
Main products include microfocus X-ray sources, core X-ray components, X-ray detectors, and X-ray simulation software, widely applied in various materials analysis and characterization and fundamental research scenarios, such as new energy materials and device characterization, semiconductor process inspection, reverse engineering of materials and chip devices, advanced materials R&D, and plasma diagnostics.
Typical Applications
- Grazing-Incidence Small-Angle X-ray Scattering (GISAXS)
- Single-Crystal/Powder X-ray Diffraction, Laue Diffraction (SC-XRD, XRPD, Laue Diffraction)
- 2D, 3D, and Confocal Micro-X-ray Fluorescence (μ-XRF)
- X-ray Excited Optical Luminescence (XEOL)
Semiconductor Solution Application Scenarios
- Metal layer structure measurement of thin film stacks
- UBM/RDL layer thickness and composition monitoring
- Angstrom-level ultra-thin layer measurement
- Bump height measurement
- TXRF-based silicon wafer surface contamination measurement
- XRR-based film thickness measurement
- Epitaxial material lattice structure and film thickness analysis
- Chip and circuit board failure analysis
- Chip and circuit board process monitoring
Features & Advantages
Specifications
Typical Parameters for Focusing Sources
| Working Distance (mm) | 10 | 60 | 100 | 150 | 200 | |
| Cu Target | Focused Spot Size (μm, FWHM, Cu-Kα) | 50 | 250 | 300 | 450 | 500 |
| Output Flux* (Cu-Kα, phs/s) | >1.1E9 | >5.4E9 | ＞8.4E9 | 5.3E9 | 6.9E9 | |
| Mo Target | Focused Spot Size (μm, FWHM, Mo-Kα) | 30 | 110 | 215 | 350 | 420 |
| Output Flux* (Mo-Kα, phs/s) | >2.7E7 | >6.7E7 | ＞6.8E7 | >7.6E7 | >8.3E7 | |
| Ag Target | Focused Spot Size (μm, FWHM, Ag-Kα) | 35 | 125 | 195 | 300 | 360 |
| Output Flux* (Ag-Kα, phs/s) | >1.2E7 | >3E7 | ＞5E7 | >4.9E7 | >5E7 | |
| W Target | Focused Spot Size (μm, FWHM, W-Lα) | 55 | 205 | 290 | 390 | 450 |
| Output Flux* (W-Lα, phs/s) | >7E8 | >3E9 | >4.8E9 | >5.4E9 | >6E9 | |
Typical Parameters for Collimated Sources
| Target Material | Output Beam Diameter (mm) | 4mm | 6mm | 10mm |
| Cu Target | Output Flux* (Cu-Kα, phs/s) | >2.3E9 | >4.8E9 | >8.5E9 |
| Mo Target | Output Flux* (Mo-Kα, phs/s) | >6.6E6 | >4.7E7 | >6.2E7 |
| Ag Target | Output Flux* (Ag-Kα, phs/s) | >2.8E7 | >6E7 | >1E8 |
| W Target | Output Flux* (W-Lα, phs/s) | >1.8E9 | >5E9 | >8.3E9 |
In-situ Transmission Diffraction Case Studies
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| In-situ diffraction during charge/discharge of LiFePO4 cathode lithium battery (measurement duration: 300 minutes) | In-situ diffraction during charge/discharge of NbS2 cathode sodium battery (measurement duration: 500 minutes) | In-situ diffraction during charge/discharge of NaVO cathode zinc battery (measurement duration: 460 minutes) |
