

Exclusive Authorization - Laser-Driven High-Brightness EUV Light Source
13.5 nm, extreme ultraviolet (EUV) lithography, high brightness, high power
Model: TEUS-S100、TEUS-S200、TEUS-S400

Introduction
TEUS-LPP Compact laser-drivenThe plasma extreme ultraviolet (EUV) light source is based on a rapidly rotating liquid metal target. This novel LPP target, combined with traditional debris mitigation technology, is the optimal solution for a clean EUV light source. With its high brightness, cleanliness, and low energy jitter, it is well suited for applications requiring high-brightness EUV light sources in high-volume manufacturing, such as mask inspection based on EUV microscopy, or for small-scale lithography production and experimental applications. The performance and stability of this light source have been validated through the delivery of multiple TEUS units.
Features & Advantages

Specifications
| 型号 | EUV收集角(sr) | 激光平均功率(W) | 脉宽(ns) | 重频(kHz) | 等离子体尺寸*(μm) | 亮度(W/mm2sr) | EUV功率(mW) | 收集镜** 寿命 |
| TEUS-S100 | 0.05 | 100 | 1.5 | 25 | ≤60 | 110 | 5 | >1年 |
| TEUS-S200 | 200 | 50 | 220 | 10 | >半年 | |||
| TEUS-S400 | 400 | 100 | 450 | 20 | >半年 |
* : 定义为等离子强度分部1/e2的直径
**:收集镜为系统选配

Typical Applications
- Mask and surface inspection
- Patterned mask inspection (PMI)
- Aerial image mask inspection (AIMS)
- Blank mask inspection (MBI)
- Materials science
- Wafer inspection
- Inspection of EUV optical components in the EUV scanning lithography process chain
Environmental requirements for use
| 型号 | 供电功耗 | 尺寸(长x宽x高) | 重量(含激光部件) | 洁净间级别 | 水流速 |
| TEUS-S100 | 6.5 kW | 1500x1000x1200 mm | 770kg | ISO7 | 10 L/min |
| TEUS-S200 | 8.5 kW | 1500x1000x1200 mm | 770kg | ISO7 | 15 L/min |
| TEUS-S400 | 10.5 kW | 1500x1000x1200 mm | 770kg | ISO7 | 25 L/min |

