Exclusive Authorization - Laser-Driven High-Brightness EUV Light Source

13.5 nm, extreme ultraviolet (EUV) lithography, high brightness, high power

Model: TEUS-S100、TEUS-S200、TEUS-S400

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Introduction

TEUS-LPP Compact laser-drivenThe plasma extreme ultraviolet (EUV) light source is based on a rapidly rotating liquid metal target. This novel LPP target, combined with traditional debris mitigation technology, is the optimal solution for a clean EUV light source. With its high brightness, cleanliness, and low energy jitter, it is well suited for applications requiring high-brightness EUV light sources in high-volume manufacturing, such as mask inspection based on EUV microscopy, or for small-scale lithography production and experimental applications. The performance and stability of this light source have been validated through the delivery of multiple TEUS units.

Features & Advantages

1Redirects droplet debris away from the input (laser) and output (EUV) windows
2Unperturbed target surface for high-repetition-rate laser systems (up to 1 MHz)
3Minimal synchronization required due to the continuous target
4High brightness, high throughput, excellent spatial stability
5Extremely high uptime
6High duty cycle, turnkey operation

Specifications

型号EUV收集角(sr)激光平均功率(W)脉宽(ns)重频(kHz)等离子体尺寸*(μm)亮度(W/mm2sr)EUV功率(mW)

收集镜**

寿命

TEUS-S1000.05
1001.5
25≤60
1105>1年
TEUS-S2002005022010>半年
TEUS-S40040010045020>半年

* : 定义为等离子强度分部1/e2的直径

**:收集镜为系统选配

Typical Applications

  • Mask and surface inspection
  • Patterned mask inspection (PMI)
  • Aerial image mask inspection (AIMS)
  • Blank mask inspection (MBI)
  • Materials science
  • Wafer inspection
  • Inspection of EUV optical components in the EUV scanning lithography process chain

Environmental requirements for use

型号供电功耗尺寸(长x宽x高)

重量(含激光部件)

洁净间级别水流速
TEUS-S1006.5 kW
1500x1000x1200 mm770kgISO7
10 L/min
TEUS-S2008.5 kW1500x1000x1200 mm770kgISO715 L/min
TEUS-S40010.5 kW

1500x1000x1200 mm

770kgISO725 L/min

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